NICOLAI Julien

Maître de Conférences 28ème Section

CNRS-Université de Poitiers-ISAE ENSMA

Institut P’ – D1 – Axe PdP – 1E43
11 Boulevard Marie et Pierre Curie
Téléport 2, BP 30179
86962 Futuroscope Cédex
France

Recherche


Recherche :

Microscopie Electronique en Transmission

Calculs de déformations

Défauts induits par irradiation

Relation entre élaboration et défauts

Semi-conducteurs – Céramiques

Enseignement :

Mécanique du point

Thermodynamique

Vibration

Optique géométrique

Divers :

Implantation – Irradiation

Diffraction des Rayons X

Méthode des Eléments Finis

Séléction de publications


Publications :

  • Fatigue resistance of selectively laser melted aluminum alloy under T6 heat treatment

J. N. Domfang. Ngnekou, Y. Nadot, G. Henaff, J. Nicolaï, L. Ridose

Procedia Engineering. 213 (2018).

  • Formation mechanisms of Ti2AlC MAX phase on SiC − 4H using magnetron sputtering and post-annealing

J. Nicolaï, C. Furgeaud, C. Bail, M-F. Beaufort

Materials and Design. 144, (2018).

  • Fatigue resistance of aluminum alloy elaborated bu Additive Laser Manufacturind (ALM)

J. N. Domfang. Ngnekou, Y. Nadot, G. Henaff, J. Nicolaï, L. Ridose

Structural Integrity Procedia. 7 (2017).

  • Highly tensile strained interfaces in InAs/AlSb heterostructures

M. Vallet, Y. Claveau, B. Warot-Fonrose, C. Gatel, J. Nicolaï, N. Combe, C. Magen, R. Teissier, A. N. Baranov, A. Ponchet

Applied Physics Letters. (2016).

  • Ti2AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

T. Cabioch, M. Alkazaz, M.-F. Beaufort, J. Nicolaï, D. Eyidi, P. Eklund Materials Research Bulletin. 80, (2016)

  • Implantation damage in heavy gas implanted 4H-SiC

C. Jiang, J. Nicolaï, A. Declémy, E. Gilabert, M.-F. Beaufort, J.-F. Barbot

NIMB. (2016)

  • In-situ evolution of helium bubbles in SiC under irradiation

M.-F. Beaufort, M. Vallet, J. Nicolaï, E. Oliviero, J.-F. Barbot

Journal of Applied Physics. 118, 205904 (2015)

  • Fully crystalline facetted Fe-Au core-shell nanoparticles

C. Langlois, P.Benzo, R. Arenal, M. Benoit, J. Nicolai, N. Combe, A.Ponchet and M. J. Casanove

Nanoletters. (2015)

  • Formation of strained interfaces in AlSb/InAs multilayers grown by MBE for quantum cascade lasers

J. Nicolaï, B. Warot-Fonrose, Ch. Gatel, R. Teissier, A.N. Baranov, C. Magen, A. Ponchet

Journal of Applied Physics. 118, 035305 (2015)

  • Local Chemical and Deformation Profiles in InAs/AlSb Multilayer Structures for Quantum Cascade Lasers

B.Warot-Fonrose, J. Nicolaï, M. Vallet, Ch. Gatel, R. Teissier, A.N. Baranov, C. Magen, A. Ponchet

Microscopy and Microanalysis. 21 (S3), (2015).

  • Sb surfactant growth of InAs/AlAs0.56Sb0.44 strained quantum well for interssuband absorption at 1.55µm

Y. Zhao, J. Nicolaï, N. Bertru, H. Folliot, M. Perrin, S. Boyer-Richard, Ch. Gatel, B. Warot-Fonrose, A. Ponchet

Applied Physics Letters. (2015)

  • Off-Axial Aberration Correction using a B-COR for Lorentz and HREM Modes

E. Snoeck, F. Houdellier, Y. Taniguchi, A. Masseboeuf, Ch. Gatel, J. Nicolaï, M. Hytch

Microscopy and Microanalysis. 20 (Suppl 3), 932-933, (2014). doi:10.1017/S1431927614006382

  • Molecular
    beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by
    molecular beam epitaxy - Effect of thermal annealing

H.
Makhloufi, P. Boonpeng, S. Mazzucato, J. Nicolaï, A. Arnoult, T.
Hungria, G. Lacoste, Ch. Gatel, A. Ponchet, H. Carrere, X. Marie, Ch.
Fontaine

Nanoscal Research Letters. 9, 123 (2014)

  • Elastic strain at interfaces in InAs/AlSb mulitlayers for quantum cascade lasers

J. Nicolaï, Ch. Gatel, B. Warot-Fonrose, R. Teissier, A.N. Baranov, C. Magen, A. Ponchet

Applied Physics Letters. 104, 031907 (2014)

  • Description and modelling of silicon oxide precipitate evolution during thermal annealing cycles

J. Nicolaï, N. Burle, Ch. Serafino, B. Pichaud

Journal of Crystal Growth. 372, 138 (2013)

  • Determination of silicon oxide precipitate stoichiometry by global and local techniques

J. Nicolaï, N. Burle, B. Pichaud

Journal of Crystal Growth. 363, 93 (2013)

  • Evolution
    of oxygen associated defects in Cz silicon during thermal annealing
    treatments : Comparison between experiment and simulation

J. Nicolaï, N. Burle, B. Pichaud

Solid State Phenomena Vols. 178-179, 188 (2011)