David Marie-Laure

Associate Professor
(Maître de conférences - HDR)

Institut Pprime – UPR 3346
Département de Physique et Mécanique des Matériaux
SP2MI-Bd Marie et Pierre Curie
TSA 41123
86073 Poitiers cedex 9


Current research interest

  • Defects in materials
  • Ion-matter interaction

  • Helium and hydrogen induced defects in materials

  • Transmission Electron Microscopy

  • Electron Energy Loss Spectroscopy (STEM-EELS, EF-TEM SI)

  • Electrical characterization (Deep Level Transient Spectroscopy)

PhD Students (former and actual)

  • Luc Lajaunie
  • Kévin Alix
  • Julien Dérès



(Departement of Physics, University of Poitiers)

  • Ion-matter interaction

  • Semiconductors

  • Statistical physics

  • Transmission Electron Microscopy

Séléction de publications

« Influence of helium on the nucleation and growth of bubbles in silicon: a multiscale modelling study »

L. Pizzagalli, J. Dérès, M.-L. David, T. Jourdan

J. Phys. D: Appl. Phys. 52, 45510 (2019)     


« Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope »

K. Alix, M.-L. David, J. Dérès, C. Hébert, L. Pizzagalli,

Physical Review B 97, 104102 (2018)


« Properties of helium bubbles in covalent systems at the nanoscale: a combined numerical and experimental study »

J. Dérès, M.-L. David, K. Alix, D.T.L. Alexander, C. Hébert, L. Pizzagalli,

Physical Review B 96, 014110 (2017)


« Density functionnal theory calculations of helium clustering in mono-, di-, and hexa-vacancy in silicon »

L. Pizzagalli, M.-L. David, J. Dérès,

Phy. Stat. Sol. A, 1700263 (2017)


« Trapping of helium in nano-bubbles in euxenite: positive identification and implications »

A.-M. Seydoux-Guillaume, M.-L. David, K. Alix, L. Datas, B. Bingen,

Earth and Planetary Science Letters 448, 133 (2016)


« Gentle quantitative measurement of helium density in nanobubbles in silicon by spectrum imaging »

K. Alix, M.-L. David, G. Lucas, D.T.L. Alexander, F. Pailloux, C. Hébert, L. Pizzagalli,

Micron 77, 57 (2015)


« In situ controlled modification of the helium density in single helium-filled nanobubbles »

M.-L. David, K. Alix, F. Pailloux, V. Mauchamp, M. Couillard, G.A. Botton and L. Pizzagalli,

J. Appl. Phys. 115, 123508 (2014)


« Molecular dynamics simulation of the initial stages of He bubbles formation in silicon »

L. Pizzagalli, M.-L. David, M. Bertolus,

Modelling Simul. Mater. Sci. Eng. 21, 065002 (2013)


« Kinetic evolution of blistering in hydrogen-implanted silicon”

C. Coupeau, G. Parry, J. Colin, M.-L. David, J. Labanowski and J. Grilhé,

Appl. Phys. Lett. 103, 031908 (2013)


Lithium implantation at low temperature in silicon for sharp buried amorphous layer formation and defect engineering”

E. Oliviero, M.-L. David, P.F.P Fichtner, M.-F. Beaufort, J.F. Barbot,

J. Appl. Phys. 113, 083515 (2013)


On the internal pressure estimates derived from implantation-induced blistering in semiconductors”

G. Parry, C. Coupeau, E. Dion, M.-L. David, J. Colin and J. Grilhé,

J. Appl. Phys. 110, 114903 (2011)


A new peeling mechanism of blisters involving surface diffusion”

C. Coupeau, J. Colin, M.-L. David and J. Grilhé,

Scripta Mat. 65, 672 (2011)


In situ probing of helium desorption from individual nanobubbles under electron irradiation”

M.-L. David, F. Pailloux, V. Mauchamp, L. Pizzagalli,

Appl. Phys. Letters 98, 171903 (2011)


Physical properties of Co/n-Ge contacts”

L. Lajaunie, M.-L. David, J.-F. Barbot,

J. Phys. D: Appl. Phys. 44, 125103 (2011)


Effect of pressure and stress on blistering induced by hydrogen implantation in semiconductors”

C. Coupeau, E. Dion, M.-L. David, J. Colin and J. Grilhé,

Eur. Phys. Letters 92, 16001 (2010)


Quantitative HRTEM investigations of nanoplatelets”

F. Pailloux, M.-L. David, L. Pizzagalli,

Micron 41, 135 (2010)


« Atomic scale structure of (001) hydrogen induced platelets in germanium

  M.L. David, L. Pizzagalli, F. Pailloux, J.F. Barbot,

  Phys. Rev. Letters 102, 155504 (2009)


Helium implantation into 4H-SiC”

J.F. Barbot, S. Leclerc, M.-L. David, E. Oliviero, R. Montsouka, F. Pailloux, D. Eydi, M.F. Beaufort, A. Declémy, V. Audurier and C. Tromas,

Phys. Stat. Solidi A 206, 1916 (2009)

Helium implanted Gallium Nitride – Evidence of gas-filled rod-shaped cavity formation along the c-axis”

J.F. Barbot, F. Pailloux, M.-L. David, L. Pizzagalli, E. Oliviero and G. Lucas,

J. Appl. Phys. 104, 043526 (2008)

The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium”

M.-L. David, F. Pailloux, D. Babonneau, M. Drouet, J.F. Barbot, E. Simoen, C. Claeys,

J. Appl. Phys. 102, 096101 (2007)

Gate bias effect on the 60 MeV proton irradiation response of 65 nm n-MOSFETs”

E. Simoen, M. Jurczak, M.-L. David, C. Claeys, A. Mohammadzadeh,

IEEE Trans. Electronic Devises 53, 1815 (2006)

Silicon Pyramidal Texture Formed in Pure Hydrogen Plasma Exposure”

Y.L. Huang, Y. Ma, R. Job, M. Scherff, W.R. Fahrner, H.G. Shi, D.S. Xue and M.L. David,

J. Electroch. Soc. 152, C600-C604 (2005)

 “Electrically active defects in irradiated 4H-SiC”

M.-L. David, G. Alfieri, E.V. Monakhov, A. Hallèn, C. Blanchard, B.G. Svensson and J.F. Barbot,

J. Appl. Phys. 95, 4728 (2004)


Stability of defects created by high fluence helium implantation in silicon”

    M.-L. David, M.F. Beaufort and J.F. Barbot,

    Nucl. Inst. Methods Phys. Res. B 226, 531 (2004)

The effect of implant temperature on defects created using high doses of helium in silicon”

   M.-L. David, M.F. Beaufort and J.F. Barbot,

   J. Appl. Phys. 93, 1438 (2003)

Radiation damage in He implanted silicon at high temperature using multi-energies”

M.-L. David, A. Ratchenkova, E. Oliviero, M.F. Denanot, M.F. Beaufort, A. Declemy, N.N. Gerasimenko and J.F. Barbot,

Nucl. Inst. Methods Phys. Res. B 198, 83 (2002)

On the effects of implantation temperature in helium implanted silicon”

   E. Oliviero, M.-L. David, M.F. Beaufort, J.F. Barbot and A. van Veen,

  Appl. Phys. Letter 81, 4201 (2002)

Formation of bubbles by high dose He implantation in 4H-SiC”

E. Oliviero, M.-L. David, M.F. Beaufort, J. Nomgaudyte, L. Pranevicius, A. Declémy and J.F. Barbot,

J. Appl. Phys. 91, 1179 (2002)